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2SK374 - N-Channel MOSFET

Features

  • q Low noise-figure (NF) q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.95 2.9.
  • 0.05 1 1.9±0.2 +0.2 0.95 3 0.4.
  • 0.05 +0.1 2 1.45 Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature VDSX VGDO VGSO ID IG PD Tch Tstg 55.
  • 55.
  • 55 30 10 200 150.

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Datasheet preview – 2SK374

Datasheet Details

Part number 2SK374
Manufacturer Panasonic
File Size 33.01 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK374 Datasheet
Additional preview pages of the 2SK374 datasheet.

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Full PDF Text Transcription

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Silicon Junction FETs (Small Signal) 2SK374 Silicon N-Channel Junction FET For low-frequency amplification For switching 0.65±0.15 +0.2 unit: mm 0.65±0.15 2.8 –0.3 1.5 –0.05 +0.25 s Features q Low noise-figure (NF) q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 0.4 –0.05 +0.1 2 1.
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